Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFR6215TRPBF MOSFET P-CH 150V 13A DPAK Infineon Technologies	4,166 In Stock	1 : ¥11.49000 Cut Tape (CT) 2,000 : ¥4.76620 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	13A (Tc)	10V	295mOhm @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	860 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI4447DY-T1-E3 MOSFET P-CH 40V 3.3A 8SO Vishay Siliconix	4,830 In Stock	1 : ¥6.57000 Cut Tape (CT) 2,500 : ¥2.48136 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	40 V	3.3A (Ta)	15V, 10V	72mOhm @ 4.5A, 15V	2.2V @ 250µA	14 nC @ 4.5 V	±16V	805 pF @ 20 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
C3M0045065D GEN 3 650V 45 M SIC MOSFET Wolfspeed, Inc.	459 In Stock	1 : ¥161.57000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	49A (Tc)	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	63 nC @ 15 V	+19V, -8V	1621 pF @ 600 V	-	176W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFH220N20X3 MOSFET N-CH 200V 220A TO247 Littelfuse Inc.	0 In Stock 960 Factory Check Lead Time	30 : ¥132.94133 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	6.2mOhm @ 110A, 10V	4.5V @ 4mA	204 nC @ 10 V	±20V	13600 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.