Single FETs, MOSFETs

Results: 5
Manufacturer
onsemiVishay Siliconix
Series
-TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)21A (Ta), 78A (Tc)50A (Tc)60A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 18A, 10V4.5mOhm @ 15A, 10V4.5mOhm @ 20A, 4.5V4.5mOhm @ 35A, 10V9.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2V @ 250µA2.5V @ 250µA3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V37 nC @ 10 V100 nC @ 10 V110 nC @ 10 V300 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V1710 pF @ 30 V4280 pF @ 15 V5000 pF @ 20 V8840 pF @ 15 V
Power Dissipation (Max)
3.6W (Ta), 50W (Tc)3.7W (Ta), 52W (Tc)4.8W (Ta), 57W (Tc)57W (Tc)83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)PowerPAK® 1212-8PowerPAK® 1212-8SPowerPAK® SO-8
Package / Case
8-PowerTDFN, 5 LeadsPowerPAK® 1212-8PowerPAK® 1212-8SPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS413DN-T1-GE3
MOSFET P-CH 30V 18A PPAK 1212-8
Vishay Siliconix
56,098
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
18A (Tc)
4.5V, 10V
9.4mOhm @ 15A, 10V
2.5V @ 250µA
110 nC @ 10 V
±20V
4280 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8S
SISS23DN-T1-GE3
MOSFET P-CH 20V 50A PPAK 1212-8S
Vishay Siliconix
16,640
In Stock
1 : ¥6.81000
Cut Tape (CT)
3,000 : ¥2.58415
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
50A (Tc)
1.8V, 4.5V
4.5mOhm @ 20A, 4.5V
900mV @ 250µA
300 nC @ 10 V
±8V
8840 pF @ 15 V
-
4.8W (Ta), 57W (Tc)
-50°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
PowerPAK 1212-8S
SISS26DN-T1-GE3
MOSFET N-CH 60V 60A PPAK1212-8S
Vishay Siliconix
12,562
In Stock
1 : ¥13.30000
Cut Tape (CT)
3,000 : ¥5.50076
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
6V, 10V
4.5mOhm @ 15A, 10V
3.6V @ 250µA
37 nC @ 10 V
±20V
1710 pF @ 30 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
5-DFN, 8-SO Flat Lead
NVMFS5C460NLAFT1G
MOSFET N-CH 40V 21A/78A 5DFN
onsemi
942
In Stock
1 : ¥12.40000
Cut Tape (CT)
1,500 : ¥5.89486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
21A (Ta), 78A (Tc)
4.5V, 10V
4.5mOhm @ 35A, 10V
2V @ 250µA
23 nC @ 10 V
±20V
1300 pF @ 25 V
-
3.6W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
PowerPak® SO-8
SQJ422EP-T1_BE3
MOSFET N-CH 40V 75A PPAK SO-8
Vishay Siliconix
8,873
In Stock
1 : ¥13.55000
Cut Tape (CT)
3,000 : ¥5.60264
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
75A (Tc)
-
3.4mOhm @ 18A, 10V
2.5V @ 250µA
100 nC @ 10 V
±20V
5000 pF @ 20 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.