Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
OptiMOS™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 2.5V
Rds On (Max) @ Id, Vgs
23mOhm @ 3.7A, 2.5V25.8mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
750mV @ 30µA1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 2.5 V24.8 nC @ 4.5 V
Vgs (Max)
+6V, -8V±8V
Input Capacitance (Ciss) (Max) @ Vds
1447 pF @ 10 V1800 pF @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
PG-SC59-3UFM
Package / Case
3-SMD, Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
105,828
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥1.25811
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
1.8V, 2.5V
23mOhm @ 3.7A, 2.5V
750mV @ 30µA
4.7 nC @ 2.5 V
±8V
1447 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SC59-3
TO-236-3, SC-59, SOT-23-3
1,663
In Stock
1 : ¥5.83000
Cut Tape (CT)
3,000 : ¥1.36396
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.4A (Ta)
1.5V, 4.5V
25.8mOhm @ 4A, 4.5V
1V @ 1mA
24.8 nC @ 4.5 V
+6V, -8V
1800 pF @ 10 V
-
500mW (Ta)
150°C
Surface Mount
UFM
3-SMD, Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.