Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-OptiMOS™-5TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta), 300mA (Tc)2.4A (Ta)2.7A (Ta)5.8A (Tc)260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V36mOhm @ 4.5A, 10V100mOhm @ 2.7A, 4.5V120mOhm @ 2.5A, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.25V @ 250µA2.1V @ 250µA2.5V @ 250µA3.8V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V3.9 nC @ 10 V5.3 nC @ 4.5 V10 nC @ 10 V166 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V190 pF @ 25 V250 pF @ 10 V335 pF @ 15 V11830 pF @ 50 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)1.08W (Ta)1.1W (Ta)1.25W (Ta), 2.1W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-HSOF-8-1SOT-23-3SOT-23-3 (TO-236)SOT-23-6TO-236AB
Package / Case
8-PowerSFNSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
5Results
Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
74,420
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP2215L-7
MOSFET P-CH 20V 2.7A SOT23-3
Diodes Incorporated
59,608
In Stock
45,000
Factory
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.79323
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.7A (Ta)
2.5V, 4.5V
100mOhm @ 2.7A, 4.5V
1.25V @ 250µA
5.3 nC @ 4.5 V
±12V
250 pF @ 10 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-6
ZXMN3A01E6TA
MOSFET N-CH 30V 2.4A SOT-23-6
Diodes Incorporated
138,507
In Stock
171,000
Factory
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.74605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.4A (Ta)
4.5V, 10V
120mOhm @ 2.5A, 10V
1V @ 250µA
3.9 nC @ 10 V
±20V
190 pF @ 25 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
4,967
In Stock
1 : ¥40.31000
Cut Tape (CT)
2,000 : ¥19.62492
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
260A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 210µA
166 nC @ 10 V
±20V
11830 pF @ 50 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
SOT-23-3
SI2366DS-T1-GE3
MOSFET N-CH 30V 5.8A SOT23-3
Vishay Siliconix
8,274
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.22300
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Tc)
10V
36mOhm @ 4.5A, 10V
2.5V @ 250µA
10 nC @ 10 V
±20V
335 pF @ 15 V
-
1.25W (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.