Single FETs, MOSFETs

Results: 2
Series
OptiMOS™OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
80 V150 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 20A, 10V30mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.3V @ 36µA4.6V @ 32µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 75 V2340 pF @ 40 V
Power Dissipation (Max)
62.5W (Tc)69W (Tc)
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ300N15NS5ATMA1
MOSFET N-CH 150V 32A TSDSON
Infineon Technologies
11,909
In Stock
1 : ¥16.25000
Cut Tape (CT)
5,000 : ¥7.04826
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
32A (Tc)
8V, 10V
30mOhm @ 16A, 10V
4.6V @ 32µA
13 nC @ 10 V
±20V
950 pF @ 75 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TSDSON-8
BSZ070N08LS5ATMA1
MOSFET N-CH 80V 40A TSDSON
Infineon Technologies
7
In Stock
1 : ¥12.31000
Cut Tape (CT)
5,000 : ¥5.34909
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
4.5V, 10V
7mOhm @ 20A, 10V
2.3V @ 36µA
5 nC @ 4.5 V
±20V
2340 pF @ 40 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.