Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Microchip Technologyonsemi
Packaging
BagCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V30 V
Current - Continuous Drain (Id) @ 25°C
530mA (Tj)680mA (Ta)4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 5V2.7V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
45mOhm @ 4.3A, 10V450mOhm @ 500mA, 4.5V1.3Ohm @ 500mA, 5V
Vgs(th) (Max) @ Id
1V @ 1mA1.5V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 4.5 V23 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V200 pF @ 20 V720 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)1W (Tc)1.3W (Ta)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23-3TO-92-3
Package / Case
3-SMD, SOT-23-3 VariantTO-226-3, TO-92-3 (TO-226AA)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV303N
MOSFET N-CH 25V 680MA SOT23
onsemi
183,231
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.59365
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
680mA (Ta)
2.7V, 4.5V
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3 nC @ 4.5 V
±8V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
AOSS21311C
MOSFET P-CH 30V 4.3A SOT23-3
Alpha & Omega Semiconductor Inc.
6,782
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80150
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
45mOhm @ 4.3A, 10V
2.2V @ 250µA
23 nC @ 10 V
±20V
720 pF @ 15 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
TO-92-3(StandardBody),TO-226_straightlead
TN0702N3-G
MOSFET N-CH 20V 530MA TO92-3
Microchip Technology
2,374
In Stock
1 : ¥12.48000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
20 V
530mA (Tj)
2V, 5V
1.3Ohm @ 500mA, 5V
1V @ 1mA
-
±20V
200 pF @ 20 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.