Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
150 V200 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V10V
Rds On (Max) @ Id, Vgs
52mOhm @ 18A, 10V125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 25µA4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V890 pF @ 75 V
Power Dissipation (Max)
50W (Tc)57W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ520N15NS3GATMA1
MOSFET N-CH 150V 21A 8TSDSON
Infineon Technologies
14,325
In Stock
1 : ¥13.30000
Cut Tape (CT)
5,000 : ¥5.24511
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
21A (Tc)
8V, 10V
52mOhm @ 18A, 10V
4V @ 35µA
12 nC @ 10 V
±20V
890 pF @ 75 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
8-Power TDFN
BSZ12DN20NS3GATMA1
MOSFET N-CH 200V 11.3A 8TSDSON
Infineon Technologies
2,772
In Stock
1 : ¥11.41000
Cut Tape (CT)
5,000 : ¥4.49919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
11.3A (Tc)
10V
125mOhm @ 5.7A, 10V
4V @ 25µA
8.7 nC @ 10 V
±20V
680 pF @ 100 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.