Single FETs, MOSFETs

Results: 2
Series
OptiMOS™OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
80 V100 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 100A, 10V1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 279µA4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 50 V16900 pF @ 40 V
Power Dissipation (Max)
313W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-7, D2Pak
IPB015N08N5ATMA1
MOSFET N-CH 80V 180A TO263-7
Infineon Technologies
3,870
In Stock
1 : ¥56.98000
Cut Tape (CT)
1,000 : ¥32.33292
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
180A (Tc)
6V, 10V
1.5mOhm @ 100A, 10V
3.8V @ 279µA
222 nC @ 10 V
±20V
16900 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
TO-263-7, D2Pak
IPB017N10N5LFATMA1
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
787
In Stock
1 : ¥62.89000
Cut Tape (CT)
1,000 : ¥35.67997
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
1.7mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.