Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedEPCInfineon Technologies
Series
-eGaN®OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)44A (Tc)48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 25A, 5V14.6mOhm @ 22A, 10V1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.3V @ 23µA2.5V @ 7mA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V16.3 nC @ 5 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
100 pF @ 25 V1300 pF @ 50 V2366 pF @ 50 V
Power Dissipation (Max)
2W (Ta)2.5W (Ta), 52W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
7-QFN (3x5)PG-TDSON-8-6SOT-223-3
Package / Case
7-PowerWQFN8-PowerTDFNTO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC146N10LS5ATMA1
MOSFET N-CH 100V 44A TDSON-8-6
Infineon Technologies
12,917
In Stock
1 : ¥11.25000
Cut Tape (CT)
5,000 : ¥4.27233
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
44A (Tc)
4.5V, 10V
14.6mOhm @ 22A, 10V
2.3V @ 23µA
10 nC @ 4.5 V
±20V
1300 pF @ 50 V
-
2.5W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
EPC2306ENGRT
EPC2306ENGRT
TRANS GAN 100V .0038OHM3X5MM QFN
EPC
5,865
In Stock
1 : ¥43.92000
Cut Tape (CT)
3,000 : ¥21.39311
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
SOT-223-3
ZVN4206GVTA
MOSFET N-CH 60V 1A SOT223
Diodes Incorporated
27,420
In Stock
1 : ¥7.64000
Cut Tape (CT)
1,000 : ¥2.95241
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1A (Ta)
5V, 10V
1Ohm @ 1.5A, 10V
3V @ 1mA
-
±20V
100 pF @ 25 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.