Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)10.5A (Ta), 16A (Tc)13A (Ta), 30A (Tc)15A (Ta), 80A (Tc)24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V6mOhm @ 20A, 10V7.5mOhm @ 20A, 10V18.5mOhm @ 4A, 10V33mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.2V @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.5 nC @ 10 V23.2 nC @ 10 V40.1 nC @ 10 V41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 30 V1382 pF @ 20 V2090 pF @ 30 V2798 pF @ 20 V
Power Dissipation (Max)
700mW (Ta)2.2W (Ta), 41W (Tc)2.2W (Ta), 62.5W (Tc)2.62W (Ta), 65.2W (Tc)3.7W (Ta), 31.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
POWERDI3333-8PowerPAK® SO-8U-DFN2020-6 (Type E)
Package / Case
6-PowerUDFN8-PowerVDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type E
DMP4047LFDE-7
MOSFET P-CH 40V 3.3A 6UDFN
Diodes Incorporated
53,251
In Stock
1,131,000
Factory
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43357
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
3.3A (Ta)
4.5V, 10V
33mOhm @ 4.4A, 10V
2.2V @ 250µA
23.2 nC @ 10 V
±20V
1382 pF @ 20 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
PowerDI3333-8
DMT6007LFGQ-7
MOSFET N-CH 60V 15A PWRDI3333
Diodes Incorporated
5,923
In Stock
224,000
Factory
1 : ¥8.21000
Cut Tape (CT)
2,000 : ¥3.38252
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
15A (Ta), 80A (Tc)
4.5V, 10V
6mOhm @ 20A, 10V
2V @ 250µA
41.3 nC @ 10 V
±20V
2090 pF @ 30 V
-
2.2W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
PowerPAK SO-8
SIR4606DP-T1-GE3
N-CHANNEL 60 V (D-S) MOSFET POWE
Vishay Siliconix
10,235
In Stock
1 : ¥9.93000
Cut Tape (CT)
3,000 : ¥4.10293
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10.5A (Ta), 16A (Tc)
7.5V, 10V
18.5mOhm @ 4A, 10V
4V @ 250µA
13.5 nC @ 10 V
±20V
540 pF @ 30 V
-
3.7W (Ta), 31.2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerDI3333-8
DMT6010LFG-7
MOSFET N-CH 60V 13A PWRDI3333
Diodes Incorporated
3,816
In Stock
30,000
Factory
1 : ¥6.98000
Cut Tape (CT)
2,000 : ¥2.63695
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
13A (Ta), 30A (Tc)
4.5V, 10V
7.5mOhm @ 20A, 10V
2V @ 250µA
41.3 nC @ 10 V
±20V
2090 pF @ 30 V
-
2.2W (Ta), 41W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
POWERDI3333-8
8-PowerVDFN
PowerDI3333-8
DMTH43M8LFGQ-7
MOSFET N-CH 40V PWRDI3333
Diodes Incorporated
2,000
In Stock
498,000
Factory
1 : ¥9.19000
Cut Tape (CT)
2,000 : ¥3.81415
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
3mOhm @ 20A, 10V
2.5V @ 250µA
40.1 nC @ 10 V
±20V
2798 pF @ 20 V
-
2.62W (Ta), 65.2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.