Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	134,853 In Stock	1 : ¥7.14000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF520PBF MOSFET N-CH 100V 9.2A TO220AB Vishay Siliconix	3,020 In Stock	1 : ¥9.28000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	9.2A (Tc)	10V	270mOhm @ 5.5A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
SQ2308CES-T1_GE3 MOSFET N-CH 60V 2.3A SOT23 Vishay Siliconix	30,938 In Stock	1 : ¥7.72000 Cut Tape (CT) 3,000 : ¥1.86676 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	150mOhm @ 2.3A, 10V	2.5V @ 250µA	5.3 nC @ 10 V	±20V	205 pF @ 30 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.