Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedNexperia USA Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta)4.1A (Ta)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 20A, 4.5V42mOhm @ 4.1A, 10V70mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.3 nC @ 10 V300 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
209 pF @ 15 V336 pF @ 25 V8840 pF @ 15 V
Power Dissipation (Max)
510mW (Ta), 5W (Tc)1.08W (Ta)4.8W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)
Supplier Device Package
PowerPAK® 1212-8SSOT-23-3TO-236AB
Package / Case
PowerPAK® 1212-8STO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV45EN2R
MOSFET N-CH 30V 4.1A TO236AB
Nexperia USA Inc.
48,268
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.93655
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.1A (Ta)
4.5V, 10V
42mOhm @ 4.1A, 10V
2V @ 250µA
6.3 nC @ 10 V
±20V
209 pF @ 15 V
-
510mW (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP3098L-7
MOSFET P-CH 30V 3.8A SOT23-3
Diodes Incorporated
16,858
In Stock
1,917,000
Factory
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.84681
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
70mOhm @ 3.8A, 10V
2.1V @ 250µA
-
±20V
336 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8S
SISS23DN-T1-GE3
MOSFET P-CH 20V 50A PPAK 1212-8S
Vishay Siliconix
16,640
In Stock
1 : ¥6.81000
Cut Tape (CT)
3,000 : ¥2.58415
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
50A (Tc)
1.8V, 4.5V
4.5mOhm @ 20A, 4.5V
900mV @ 250µA
300 nC @ 10 V
±8V
8840 pF @ 15 V
-
4.8W (Ta), 57W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.