Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta)13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs
9.3mOhm @ 12A, 10V21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.2 nC @ 10 V62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
697 pF @ 15 V2706 pF @ 15 V
Power Dissipation (Max)
1W (Ta)2.66W (Ta), 33.8W (Tc)
Supplier Device Package
8-WDFN (3.3x3.3)POWERDI3333-8
Package / Case
8-PowerVDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerDI3333-8
DMN3018SFG-13
MOSFET N-CH 30V 8.5A PWRDI3333-8
Diodes Incorporated
14,305
In Stock
12,000
Factory
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.09420
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
8.5A (Ta)
4.5V, 10V
21mOhm @ 10A, 10V
2.1V @ 250µA
13.2 nC @ 10 V
±25V
697 pF @ 15 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
8-WDFN
NTTFS015P03P8ZTAG
MOSFET P-CH 30V 13.4A/47.6A 8DFN
onsemi
995
In Stock
547,500
Factory
1 : ¥5.91000
Cut Tape (CT)
1,500 : ¥2.52074
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
13.4A (Ta), 47.6A (Tc)
4.5V, 10V
9.3mOhm @ 12A, 10V
3V @ 250µA
62.3 nC @ 10 V
±25V
2706 pF @ 15 V
-
2.66W (Ta), 33.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.