Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

RU1J002YNTCL MOSFET N-CH 50V 200MA UMT3F Rohm Semiconductor	630,855 In Stock	1 : ¥2.05000 Cut Tape (CT) 3,000 : ¥0.34818 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	0.9V, 4.5V	2.2Ohm @ 200mA, 4.5V	800mV @ 1mA	-	±8V	26 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	UMT3F	SC-85
BSS138PW,115 MOSFET N-CH 60V 320MA SOT323 Nexperia USA Inc.	912,909 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.37872 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	320mA (Ta)	10V	1.6Ohm @ 300mA, 10V	1.5V @ 250µA	0.8 nC @ 4.5 V	±20V	50 pF @ 10 V	-	260mW (Ta), 830mW (Tc)	-55°C ~ 150°C (TA)	Automotive	AEC-Q101	Surface Mount	SOT-323	SC-70, SOT-323
STD100N10F7 MOSFET N CH 100V 80A DPAK STMicroelectronics	13,195 In Stock	1 : ¥17.73000 Cut Tape (CT) 2,500 : ¥7.97671 Tape & Reel (TR)	DeepGATE™, STripFET™ VII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	10V	8mOhm @ 40A, 10V	4.5V @ 250µA	61 nC @ 10 V	±20V	4369 pF @ 50 V	-	120W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.