Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IXFH46N65X2 MOSFET N-CH 650V 46A TO247 Littelfuse Inc.	310 In Stock	1 : ¥59.93000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	76mOhm @ 23A, 10V	5.5V @ 4mA	75 nC @ 10 V	±30V	4810 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
AS1M025120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	124 In Stock	1 : ¥312.22000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	195 nC @ 20 V	+25V, -10V	3600 pF @ 1000 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
LSIC1MO120E0080 SICFET N-CH 1200V 39A TO247-3 Littelfuse Inc.	0 In Stock Check Lead Time	1 : ¥173.23000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	39A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	95 nC @ 20 V	+22V, -6V	1825 pF @ 800 V	-	179W (Tc)	-55°C ~ 150°C	Through Hole	TO-247AD	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.