Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS138 MOSFET N-CH 50V 220MA SOT23-3 onsemi	116,263 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.48928 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	2.4 nC @ 10 V	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SI4447ADY-T1-GE3 MOSFET P-CH 40V 7.2A 8SO Vishay Siliconix	5,498 In Stock	1 : ¥4.68000 Cut Tape (CT) 2,500 : ¥1.77240 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	7.2A (Tc)	4.5V, 10V	45mOhm @ 5A, 10V	2.5V @ 250µA	38 nC @ 10 V	±20V	970 pF @ 20 V	-	4.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRFR6215TRPBF MOSFET P-CH 150V 13A DPAK Infineon Technologies	4,416 In Stock	1 : ¥11.49000 Cut Tape (CT) 2,000 : ¥4.76620 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	13A (Tc)	10V	295mOhm @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	860 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI4447DY-T1-GE3 MOSFET P-CH 40V 3.3A 8SO Vishay Siliconix	7,375 In Stock	1 : ¥6.57000 Cut Tape (CT) 2,500 : ¥2.48136 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	40 V	3.3A (Ta)	15V, 10V	72mOhm @ 4.5A, 15V	2.2V @ 250µA	14 nC @ 4.5 V	±16V	805 pF @ 20 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.