Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)1.8A (Tc)
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1A, 10V7Ohm @ 1.1A, 10V
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V270 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)50W (Tc)
Supplier Device Package
DPAKTO-252AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6,737
In Stock
1 : ¥6.40000
Cut Tape (CT)
3,000 : ¥2.43410
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
400 V
1.8A (Tc)
10V
7Ohm @ 1.1A, 10V
4V @ 250µA
13 nC @ 10 V
±20V
270 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR310TRPBF
MOSFET N-CH 400V 1.7A DPAK
Vishay Siliconix
11,423
In Stock
1 : ¥9.28000
Cut Tape (CT)
2,000 : ¥3.83583
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
1.7A (Tc)
10V
3.6Ohm @ 1A, 10V
4V @ 250µA
12 nC @ 10 V
±20V
170 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.