Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDV301N MOSFET N-CH 25V 220MA SOT23 onsemi	364,503 In Stock	1 : ¥2.71000 Cut Tape (CT) 3,000 : ¥0.45080 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	220mA (Ta)	2.7V, 4.5V	4Ohm @ 400mA, 4.5V	1.06V @ 250µA	0.7 nC @ 4.5 V	±8V	9.5 pF @ 10 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS316NH6327XTSA1 MOSFET N-CH 30V 1.4A SOT23-3 Infineon Technologies	599,106 In Stock	1 : ¥1.97000 Cut Tape (CT) 3,000 : ¥0.36093 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.4A (Ta)	4.5V, 10V	160mOhm @ 1.4A, 10V	2V @ 3.7µA	0.6 nC @ 5 V	±20V	94 pF @ 15 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
BSN20-7 MOSFET N-CH 50V 500MA SOT23 Diodes Incorporated	484,772 In Stock	1 : ¥2.63000 Cut Tape (CT) 3,000 : ¥0.51311 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	500mA (Ta)	4.5V, 10V	1.8Ohm @ 220mA, 10V	1.5V @ 250µA	0.8 nC @ 10 V	±20V	40 pF @ 10 V	-	600mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
RJP020N06T100 MOSFET N-CH 60V 2A MPT3 Rohm Semiconductor	16,480 In Stock	1 : ¥7.14000 Cut Tape (CT) 1,000 : ¥3.15010 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	2.5V, 4.5V	240mOhm @ 2A, 4.5V	1.5V @ 1mA	10 nC @ 4 V	±12V	160 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	Surface Mount	MPT3	TO-243AA
TPN2010FNH,L1Q MOSFET N-CH 250V 5.6A 8TSON Toshiba Semiconductor and Storage	15,952 In Stock	1 : ¥11.90000 Cut Tape (CT) 5,000 : ¥5.15948 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	5.6A (Ta)	10V	198mOhm @ 2.8A, 10V	4V @ 200µA	7 nC @ 10 V	±20V	600 pF @ 100 V	-	700mW (Ta), 39W (Tc)	150°C (TJ)	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	1 In Stock	1 : ¥95.23000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	Through Hole	TO-247-4L(T)	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.