Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

C3M0021120K SICFET N-CH 1200V 100A TO247-4L Wolfspeed, Inc.	1,337 In Stock	1 : ¥336.77000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	15V	28.8mOhm @ 50A, 15V	3.6V @ 17.7mA	162 nC @ 15 V	+15V, -4V	4818 pF @ 1000 V	-	469W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
IXTA1R4N100P MOSFET N-CH 1000V 1.4A TO263 Littelfuse Inc.	416 In Stock	1 : ¥26.19000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	1.4A (Tc)	10V	11Ohm @ 500mA, 10V	4.5V @ 50µA	17.8 nC @ 10 V	±20V	450 pF @ 25 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.