Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Rohm Semiconductor
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
2A (Ta)54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V5V
Rds On (Max) @ Id, Vgs
11mOhm @ 15A, 10V170mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA2.5V @ 1mA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V2769 pF @ 25 V
Power Dissipation (Max)
700mW (Ta)79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
LFPAK33TSMT3
Package / Case
SC-96SOT-1210, 8-LFPAK33 (5-Lead)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TSMT3
RSR020N06HZGTL
MOSFET N-CH 60V 2A TSMT3
Rohm Semiconductor
7,675
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77239
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
170mOhm @ 2A, 10V
2.5V @ 1mA
2.7 nC @ 5 V
±20V
180 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TSMT3
SC-96
LFPAK33
BUK9M12-60EX
MOSFET N-CH 60V 54A LFPAK33
Nexperia USA Inc.
4,070
In Stock
1 : ¥7.06000
Cut Tape (CT)
1,500 : ¥3.10763
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
54A (Tc)
5V
11mOhm @ 15A, 10V
2.1V @ 1mA
-
±10V
2769 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.