Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4.5A (Ta)50A (Tc)
Rds On (Max) @ Id, Vgs
7.9mOhm @ 50A, 10V72mOhm @ 4.5A, 10V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2.2V @ 34µA2.5V @ 250µA2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V12 nC @ 10 V29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V415 pF @ 50 V4900 pF @ 30 V
Power Dissipation (Max)
350mW (Ta)2.8W (Ta)79W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
6-DFN (2x2)PG-TO252-3-311SOT-23
Package / Case
6-UDFN Exposed PadTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-DFN
AON2290
MOSFET N CH 100V 4.5A DFN 2X2B
Alpha & Omega Semiconductor Inc.
227,173
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥1.36488
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.5A (Ta)
4.5V, 10V
72mOhm @ 4.5A, 10V
2.8V @ 250µA
12 nC @ 10 V
±20V
415 pF @ 50 V
-
2.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN (2x2)
6-UDFN Exposed Pad
IPD079N06L3GATMA1
IPD079N06L3GATMA1
MOSFET N-CH 60V 50A TO252-3
Infineon Technologies
4,989
In Stock
1 : ¥8.70000
Cut Tape (CT)
2,500 : ¥3.59133
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
7.9mOhm @ 50A, 10V
2.2V @ 34µA
29 nC @ 4.5 V
±20V
4900 pF @ 30 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-311
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
93,554
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18956
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 50 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.