Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
39mOhm @ 4.7A, 4.5V254mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.65 nC @ 4.5 V19 nC @ 4.5 V
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
81 pF @ 15 V1020 pF @ 10 V
Power Dissipation (Max)
342mW (Ta)750mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)SOT-323
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2323DS-T1-E3
MOSFET P-CH 20V 3.7A SOT23-3
Vishay Siliconix
41,970
In Stock
1 : ¥5.83000
Cut Tape (CT)
3,000 : ¥2.20368
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
1.8V, 4.5V
39mOhm @ 4.7A, 4.5V
1V @ 250µA
19 nC @ 4.5 V
±8V
1020 pF @ 10 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-323
PMF250XNEX
MOSFET N-CH 30V 1A SOT323
Nexperia USA Inc.
111,312
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.47672
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1A (Ta)
2.5V, 4.5V
254mOhm @ 900mA, 4.5V
1.25V @ 250µA
1.65 nC @ 4.5 V
±12V
81 pF @ 15 V
-
342mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.