Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
4.8A (Ta), 16.5A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 40A, 10V56mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 50 V2695 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta), 31W (Tc)33.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-PQFN (5x6)TO-220F-3
Package / Case
8-PowerTDFNTO-220-3 Full Pack
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS8622
MOSFET N-CH 100V 4.8A/16.5A 8QFN
onsemi
10,570
In Stock
39,000
Factory
1 : ¥10.67000
Cut Tape (CT)
3,000 : ¥4.40725
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.8A (Ta), 16.5A (Tc)
6V, 10V
56mOhm @ 4.8A, 10V
4V @ 250µA
7 nC @ 10 V
±20V
400 pF @ 50 V
-
2.5W (Ta), 31W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
TO-220F
FDPF085N10A
MOSFET N-CH 100V 40A TO220F
onsemi
736
In Stock
1 : ¥16.50000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
10V
8.5mOhm @ 40A, 10V
4V @ 250µA
40 nC @ 10 V
±20V
2695 pF @ 50 V
-
33.3W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.