Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
80 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Ta)11A (Tc)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 10A, 10V105mOhm @ 10A, 10V500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2V @ 250µA (Min)4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V41 nC @ 10 V44 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V1200 pF @ 25 V
Power Dissipation (Max)
1.9W (Ta)3W (Ta), 125W (Tc)79W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® SO-8TO-252AA (DPAK)TO-263 (D2PAK)
Package / Case
PowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRLR3410TRPBF
MOSFET N-CH 100V 17A DPAK
Infineon Technologies
35,912
In Stock
1 : ¥8.21000
Cut Tape (CT)
2,000 : ¥3.40358
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
4V, 10V
105mOhm @ 10A, 10V
2V @ 250µA
34 nC @ 5 V
±16V
800 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPAK SO-8
SI7852DP-T1-E3
MOSFET N-CH 80V 7.6A PPAK SO-8
Vishay Siliconix
9,832
In Stock
1 : ¥19.78000
Cut Tape (CT)
3,000 : ¥8.90278
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
7.6A (Ta)
6V, 10V
16.5mOhm @ 10A, 10V
2V @ 250µA (Min)
41 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263AB
IRF9640SPBF
MOSFET P-CH 200V 11A D2PAK
Vishay Siliconix
708
In Stock
1 : ¥25.78000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
11A (Tc)
10V
500mOhm @ 6.6A, 10V
4V @ 250µA
44 nC @ 10 V
±20V
1200 pF @ 25 V
-
3W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.