Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.Texas Instruments
Series
-HEXFET®NexFET™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V55 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)1.6A (Ta)20A (Tc)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
32mOhm @ 5A, 10V68mOhm @ 10A, 10V205mOhm @ 500mA, 8V220mOhm @ 1.6A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2V @ 1mA2.1V @ 250µA2.5V @ 250µA2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V0.959 nC @ 4.5 V2.5 nC @ 4.5 V11.9 nC @ 10 V
Vgs (Max)
-12V±10V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V198 pF @ 10 V290 pF @ 25 V643 pF @ 25 V683 pF @ 50 V
Power Dissipation (Max)
370mW (Ta)500mW (Ta)1.3W (Ta)3.4W (Ta), 68W (Tc)62W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
3-PICOSTARD2PAKMicro3™/SOT-23PowerDI5060-8 (Type UX)TO-236AB
Package / Case
3-XFDFN8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002BK,215
MOSFET N-CH 60V 350MA TO236AB
Nexperia USA Inc.
786,391
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.36077
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
50 pF @ 10 V
-
370mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML0100TRPBF
MOSFET N-CH 100V 1.6A SOT23
Infineon Technologies
35,584
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16191
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
PowerDI5060 UX
DMTH10H032LPSWQ-13
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
2,457
In Stock
1 : ¥5.34000
Cut Tape (CT)
2,500 : ¥2.02585
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
4.5V, 10V
32mOhm @ 5A, 10V
2.5V @ 250µA
11.9 nC @ 10 V
±20V
683 pF @ 50 V
-
3.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
CSD25483F4
CSD25483F4
MOSFET P-CH 20V 1.6A 3PICOSTAR
Texas Instruments
14,178
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60971
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.6A (Ta)
1.8V, 4.5V
205mOhm @ 500mA, 8V
1.2V @ 250µA
0.959 nC @ 4.5 V
-12V
198 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PICOSTAR
3-XFDFN
D2PAK SOT404
BUK9675-55A,118
MOSFET N-CH 55V 20A D2PAK
Nexperia USA Inc.
5,542
In Stock
1 : ¥10.34000
Cut Tape (CT)
800 : ¥3.78329
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
20A (Tc)
4.5V, 10V
68mOhm @ 10A, 10V
2V @ 1mA
-
±10V
643 pF @ 25 V
-
62W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.