Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2302CDS-T1-E3 MOSFET N-CH 20V 2.6A SOT23-3 Vishay Siliconix	153,679 In Stock	1 : ¥3.28000 Cut Tape (CT) 3,000 : ¥0.87982 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	2.6A (Ta)	2.5V, 4.5V	57mOhm @ 3.6A, 4.5V	850mV @ 250µA	5.5 nC @ 4.5 V	±8V	-	-	710mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI7164DP-T1-GE3 MOSFET N-CH 60V 60A PPAK SO-8 Vishay Siliconix	4,528 In Stock	1 : ¥22.99000 Cut Tape (CT) 3,000 : ¥11.20036 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60A (Tc)	10V	6.25mOhm @ 10A, 10V	4.5V @ 250µA	75 nC @ 10 V	±20V	2830 pF @ 30 V	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SI5418DU-T1-GE3 MOSFET N-CH 30V 12A PPAK Vishay Siliconix	1,152 In Stock	1 : ¥10.43000 Cut Tape (CT) 3,000 : ¥4.30101 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12A (Tc)	4.5V, 10V	14.5mOhm @ 7.7A, 10V	3V @ 250µA	30 nC @ 10 V	±20V	1350 pF @ 15 V	-	3.1W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® ChipFET™ Single	PowerPAK® ChipFET™ Single

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.