Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
44mOhm @ 3.7A, 4.5V90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 10 V635 pF @ 15 V
Power Dissipation (Max)
490mW (Ta)650mW (Ta)
Supplier Device Package
SOT-23-3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV40UN2R
MOSFET N-CH 30V 3.7A TO236AB
Nexperia USA Inc.
403,610
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.72353
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.7A (Ta)
1.8V, 4.5V
44mOhm @ 3.7A, 4.5V
900mV @ 250µA
12 nC @ 4.5 V
±12V
635 pF @ 15 V
-
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN3200U-7
MOSFET N-CH 30V 2.2A SOT23-3
Diodes Incorporated
67,270
In Stock
582,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.99221
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.2A (Ta)
1.5V, 4.5V
90mOhm @ 2.2A, 4.5V
1V @ 250µA
-
±8V
290 pF @ 10 V
-
650mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.