Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.Rohm Semiconductor
Series
-OptiMOS™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
400mA (Tc)2.5A (Ta)70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 70A, 10V54mOhm @ 2.5A, 4.5V1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA1.3V @ 1mA2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
0.68 nC @ 4.5 V5 nC @ 4.5 V175 nC @ 10 V
Vgs (Max)
±8V±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 15 V370 pF @ 10 V12400 pF @ 15 V
Power Dissipation (Max)
320mW (Ta)350mW (Ta), 1.14W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PG-TO252-3TO-236ABTUMT3
Package / Case
3-SMD, Flat LeadsTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD042P03L3GATMA1
MOSFET P-CH 30V 70A TO252-3
Infineon Technologies
20,331
In Stock
1 : ¥14.70000
Cut Tape (CT)
2,500 : ¥6.64341
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
70A (Tc)
4.5V, 10V
4.2mOhm @ 70A, 10V
2V @ 270µA
175 nC @ 10 V
±20V
12400 pF @ 15 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-236AB
NX3008NBK,215
MOSFET N-CH 30V 400MA TO236AB
Nexperia USA Inc.
300,854
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
400mA (Tc)
1.8V, 4.5V
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68 nC @ 4.5 V
±8V
50 pF @ 15 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TUMT3
RUF025N02TL
MOSFET N-CH 20V 2.5A TUMT3
Rohm Semiconductor
19,518
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.87873
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.5V, 4.5V
54mOhm @ 2.5A, 4.5V
1.3V @ 1mA
5 nC @ 4.5 V
±10V
370 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
-
-
Surface Mount
TUMT3
3-SMD, Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.