Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
CoolMOS™HEXFET®, StrongIRFET™MDmesh™ V
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
40 V650 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)35A (Tc)84A (Tc)240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
0.75mOhm @ 100A, 10V29mOhm @ 42A, 10V78mOhm @ 19.5A, 10V280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA3.9V @ 675µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V91 nC @ 10 V204 nC @ 10 V460 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1660 pF @ 25 V3375 pF @ 100 V8825 pF @ 100 V13975 pF @ 25 V
Power Dissipation (Max)
34W (Tc)210W (Tc)375W (Tc)450W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK (7-Lead)PG-TO220-3-31TO-247-3TO-263 (D2PAK)
Package / Case
TO-220-3 Full PackTO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-7 DPak (6 LeadsTab)
IRFS7430TRL7PP
MOSFET N-CH 40V 240A D2PAK
Infineon Technologies
4,123
In Stock
1 : ¥20.44000
Cut Tape (CT)
800 : ¥17.59208
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
240A (Tc)
6V, 10V
0.75mOhm @ 100A, 10V
3.9V @ 250µA
460 nC @ 10 V
±20V
13975 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2PAK (6 Leads + Tab)
D2Pak
STB45N65M5
MOSFET N CH 650V 35A D2PAK
STMicroelectronics
1,271
In Stock
1 : ¥61.00000
Cut Tape (CT)
1,000 : ¥34.58068
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
78mOhm @ 19.5A, 10V
5V @ 250µA
91 nC @ 10 V
±25V
3375 pF @ 100 V
-
210W (Tc)
150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3 HiP
STW88N65M5
MOSFET N-CH 650V 84A TO247-3
STMicroelectronics
1,016
In Stock
1 : ¥121.92000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
84A (Tc)
10V
29mOhm @ 42A, 10V
5V @ 250µA
204 nC @ 10 V
±25V
8825 pF @ 100 V
-
450W (Tc)
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-220AB Full Pack
SPA15N60C3XKSA1
MOSFET N-CH 650V 15A TO220-FP
Infineon Technologies
252
In Stock
1 : ¥20.77000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
15A (Tc)
10V
280mOhm @ 9.4A, 10V
3.9V @ 675µA
63 nC @ 10 V
±20V
1660 pF @ 25 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-31
TO-220-3 Full Pack
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.