Single FETs, MOSFETs

Results: 2
Series
OptiMOS™OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-Key
Drain to Source Voltage (Vdss)
100 V150 V
Current - Continuous Drain (Id) @ 25°C
112A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 150A, 10V7.6mOhm @ 56A, 10
Vgs(th) (Max) @ Id
3.8V @ 250µA4.6V @ 160µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 75 V16000 pF @ 50 V
Power Dissipation (Max)
214W (Tc)375W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-8-1PG-TO220-3
Package / Case
8-PowerSFNTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
x-xSOF-8-1
IPT015N10N5ATMA1
MOSFET N-CH 100V 300A 8HSOF
Infineon Technologies
21,745
In Stock
1 : ¥49.91000
Cut Tape (CT)
2,000 : ¥26.53269
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
1.5mOhm @ 150A, 10V
3.8V @ 250µA
211 nC @ 10 V
±20V
16000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
TO-220-3
IPP076N15N5AKSA1
MOSFET N-CH 150V 112A TO220-3
Infineon Technologies
602
In Stock
1 : ¥43.35000
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
150 V
112A (Tc)
8V, 10V
7.6mOhm @ 56A, 10
4.6V @ 160µA
21 nC @ 10 V
±20V
4700 pF @ 75 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.