Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)540mA (Ta)2.8A (Ta)4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
40mOhm @ 4.5A, 4.5V85mOhm @ 3.6A, 4.5V1Ohm @ 400mA, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
950mV @ 250µA1V @ 250µA1.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.9 nC @ 4.5 V3.5 nC @ 4 V17 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V76 pF @ 15 V150 pF @ 5 V930 pF @ 10 V
Power Dissipation (Max)
225mW (Ta)460mW (Ta)1.25W (Ta)1.3W (Ta)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)X2-DFN1006-3
Package / Case
3-SMD, SOT-23-3 Variant3-XFDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
524,426
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
X2-DFN1006-3
DMP31D0UFB4-7B
MOSFET P-CH 30V 540MA 3DFN
Diodes Incorporated
73,701
In Stock
160,000
Factory
1 : ¥2.63000
Cut Tape (CT)
10,000 : ¥0.80867
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
540mA (Ta)
1.8V, 4.5V
1Ohm @ 400mA, 4.5V
1.1V @ 250µA
0.9 nC @ 4.5 V
±8V
76 pF @ 15 V
-
460mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
SOT 23-3
MGSF2N02ELT1G
MOSFET N-CH 20V 2.8A SOT23-3
onsemi
26,185
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.00570
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.8A (Ta)
2.5V, 4.5V
85mOhm @ 3.6A, 4.5V
1V @ 250µA
3.5 nC @ 4 V
±8V
150 pF @ 5 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
AOSS21115C
MOSFET P-CH 20V 4.5A SOT23-3
Alpha & Omega Semiconductor Inc.
17,753
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.86085
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
1.8V, 4.5V
40mOhm @ 4.5A, 4.5V
950mV @ 250µA
17 nC @ 4.5 V
±8V
930 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.