Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
HEXFET®π-MOSV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V
Current - Continuous Drain (Id) @ 25°C
650mA (Ta)19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 5V10V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 10V1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 5 V35 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 12 V620 pF @ 25 V
Power Dissipation (Max)
1W (Ta)68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23FTO-220AB
Package / Case
SOT-23-3 Flat LeadsTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
31,403
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥0.93731
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
650mA (Ta)
3V, 5V
1.8Ohm @ 150mA, 5V
2V @ 1mA
1.5 nC @ 5 V
±12V
60 pF @ 12 V
-
1W (Ta)
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TO-220AB PKG
IRF9Z34NPBF
MOSFET P-CH 55V 19A TO220AB
Infineon Technologies
72,542
In Stock
1 : ¥5.42000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
19A (Tc)
10V
100mOhm @ 10A, 10V
4V @ 250µA
35 nC @ 10 V
±20V
620 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.