Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V55 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 8V10V
Rds On (Max) @ Id, Vgs
57mOhm @ 3.4A, 8V80mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.25V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V12 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
296 pF @ 15 V500 pF @ 25 V
Power Dissipation (Max)
590mW (Ta), 5.6W (Tc)8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-223TO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT223
BUK7880-55A/CUX
MOSFET N-CH 55V 7A SOT223
Nexperia USA Inc.
13,067
In Stock
1 : ¥4.10000
Cut Tape (CT)
1,000 : ¥1.55403
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
7A (Tc)
10V
80mOhm @ 10A, 10V
4V @ 1mA
12 nC @ 10 V
±20V
500 pF @ 25 V
-
8W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-236AB
PMV50XNEAR
PMV50XNEA - 30 V, N-CHANNEL TREN
Nexperia USA Inc.
19,054
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71576
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 8V
57mOhm @ 3.4A, 8V
1.25V @ 250µA
5 nC @ 4.5 V
±12V
296 pF @ 15 V
-
590mW (Ta), 5.6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.