Single FETs, MOSFETs

Results: 3
Manufacturer
EPCNexperia USA Inc.Texas Instruments
Series
-eGaN®NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta)42A (Tc)200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V6mOhm @ 16A, 5V11.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA2.5V @ 1mA2.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 5 V18.77 nC @ 10 V81 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
851 pF @ 50 V957 pF @ 30 V6620 pF @ 30 V
Power Dissipation (Max)
34.7W (Tc)300W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DieMLPAK33TO-263 (DDPAK-3)
Package / Case
8-PowerVDFNDieTO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power VDFN
PXN012-60QLJ
PXN012-60QL/SOT8002/MLPAK33
Nexperia USA Inc.
32,737
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.56564
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
42A (Tc)
4.5V, 10V
11.5mOhm @ 10A, 10V
2.5V @ 1mA
18.77 nC @ 10 V
±20V
957 pF @ 30 V
-
34.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
MLPAK33
8-PowerVDFN
CSD18535KTT
CSD18535KTT
MOSFET N-CH 60V 200A DDPAK
Texas Instruments
402
In Stock
1 : ¥23.64000
Cut Tape (CT)
500 : ¥14.28816
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200A (Ta)
4.5V, 10V
2mOhm @ 100A, 10V
2.4V @ 250µA
81 nC @ 10 V
±20V
6620 pF @ 30 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (DDPAK-3)
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
EPC2204
EPC2204
TRANS GAN 100V DIE 5.6MOHM
EPC
0
In Stock
Check Lead Time
1 : ¥19.78000
Cut Tape (CT)
2,500 : ¥8.93254
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.