Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta), 300mA (Tc)170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
2.25mOhm @ 20A, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V2980 pF @ 15 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)91W (Tc)
Supplier Device Package
8-WDFN (3.3x3.3)TO-236AB
Package / Case
8-PowerWDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
76,368
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
8-WDFN
NTTFS4C02NTAG
MOSFET N-CH 30V 170A 8WDFN
onsemi
1,046
In Stock
1 : ¥8.78000
Cut Tape (CT)
1,500 : ¥3.87629
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
170A (Tc)
4.5V, 10V
2.25mOhm @ 20A, 10V
2.2V @ 250µA
20 nC @ 4.5 V
±20V
2980 pF @ 15 V
-
91W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.