Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)40.2A (Ta), 263A (Tc)48A (Ta), 298A (Tc)286A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
0.9mOhm @ 20A, 10V1.4mOhm @ 23A, 10V1.9mOhm @ 25A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.2V @ 200µA2.4V @ 250µA3V @ 250µA3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V131.4 nC @ 10 V217 nC @ 4.5 V232 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V9450 pF @ 15 V14950 pF @ 15 V17140 pF @ 40 V
Power Dissipation (Max)
350mW (Ta)3.3W (Ta), 138.9W (Tc)3.8W (Ta), 144W (Tc)340W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
5-DFN (5x6) (8-SOFL)LFPAK88 (SOT1235)TO-236AB
Package / Case
8-PowerTDFN, 5 LeadsSOT-1235TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
438,833
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32700
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
5-DFN, 8-SO Flat Lead
NTMFS002P03P8ZT1G
MOSFET, POWER -30V P-CHANNEL, SO
onsemi
5,793
In Stock
1 : ¥25.37000
Cut Tape (CT)
1,500 : ¥13.09459
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
40.2A (Ta), 263A (Tc)
4.5V, 10V
1.4mOhm @ 23A, 10V
3V @ 250µA
217 nC @ 4.5 V
±25V
14950 pF @ 15 V
-
3.3W (Ta), 138.9W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NTMFS0D9N03CGT1G
MOSFET N-CH 30V 48A/298A 5DFN
onsemi
1,515
In Stock
21,000
Factory
1 : ¥20.52000
Cut Tape (CT)
1,500 : ¥9.73732
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta), 298A (Tc)
10V
0.9mOhm @ 20A, 10V
2.2V @ 200µA
131.4 nC @ 10 V
±20V
9450 pF @ 15 V
-
3.8W (Ta), 144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
PSMN1R9-80SSEJ
PSMN1R9-80SSEJ
APPLICATION SPECIFIC POWER MOSFE
Nexperia USA Inc.
0
In Stock
Check Lead Time
1 : ¥46.47000
Cut Tape (CT)
2,000 : ¥22.60303
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
286A (Tc)
10V
1.9mOhm @ 25A, 10V
3.6V @ 1mA
232 nC @ 10 V
±20V
17140 pF @ 40 V
-
340W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.