Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedonsemiToshiba Semiconductor and Storage
Series
-U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)600mA (Ta)29A (Ta), 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 50A, 10V1Ohm @ 600mA, 10V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V3.5 nC @ 10 V34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V141 pF @ 50 V5700 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)625mW (Ta)4W (Ta), 115W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C
Supplier Device Package
DPAKSOT-23-3SSM
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZXMP10A13FTA
MOSFET P-CH 100V 600MA SOT23-3
Diodes Incorporated
80,141
In Stock
612,000
Factory
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.57004
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
600mA (Ta)
6V, 10V
1Ohm @ 600mA, 10V
4V @ 250µA
3.5 nC @ 10 V
±20V
141 pF @ 50 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
110,324
In Stock
1 : ¥1.48000
Cut Tape (CT)
3,000 : ¥0.29446
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
150mW (Ta)
150°C
Surface Mount
SSM
SC-75, SOT-416
DPAK
NTD5C632NLT4G
T6 60V LL DPAK
onsemi
2,232
In Stock
1 : ¥16.91000
Cut Tape (CT)
2,500 : ¥7.62714
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
29A (Ta), 155A (Tc)
4.5V, 10V
2.5mOhm @ 50A, 10V
2.1V @ 250µA
34 nC @ 4.5 V
±20V
5700 pF @ 25 V
-
4W (Ta), 115W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.