Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
-OptiMOS™TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
210mA (Ta)4.7A (Ta), 20A (Tc)9.9A (Ta), 14A (Tc)11A (Ta), 40A (Tc)64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 32A, 10V12mOhm @ 20A, 10V14.2mOhm @ 10A, 10V62mOhm @ 4.5A, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.5V @ 250µA2.8V @ 250µA3.1V @ 73µA4.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.82 nC @ 10 V4.5 nC @ 10 V44 nC @ 10 V45 nC @ 10 V100 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V228 pF @ 50 V3360 pF @ 15 V4000 pF @ 20 V5400 pF @ 75 V
Power Dissipation (Max)
340mW (Ta)960mW (Ta), 210W (Tc)2W (Ta)2.1W (Ta), 52W (Tc)2.5W (Ta), 5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
8-SO8-SOP Advance (5x5)PG-TSDSON-8PowerDI3333-8 (Type UX)SOT-23-3
Package / Case
8-PowerTDFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ120P03NS3GATMA1
MOSFET P-CH 30V 11A/40A 8TSDSON
Infineon Technologies
28,461
In Stock
1 : ¥6.24000
Cut Tape (CT)
5,000 : ¥2.25665
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
11A (Ta), 40A (Tc)
6V, 10V
12mOhm @ 20A, 10V
3.1V @ 73µA
45 nC @ 10 V
±25V
3360 pF @ 15 V
-
2.1W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
8-SOIC
SI4401FDY-T1-GE3
MOSFET P-CH 40V 9.9A/14A 8SO
Vishay Siliconix
45,330
In Stock
1 : ¥6.90000
Cut Tape (CT)
2,500 : ¥2.63250
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
9.9A (Ta), 14A (Tc)
4.5V, 10V
14.2mOhm @ 10A, 10V
2.3V @ 250µA
100 nC @ 10 V
±20V
4000 pF @ 20 V
-
2.5W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SOT-23-3
DMN67D8L-7
MOSFET N-CH 60V 210MA SOT23
Diodes Incorporated
67,174
In Stock
456,000
Factory
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.27390
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
210mA (Ta)
5V, 10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
0.82 nC @ 10 V
±30V
22 pF @ 25 V
-
340mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerDI3333-8
DMT10H072LFV-7
MOSFET N-CH 100V PWRDI3333
Diodes Incorporated
5,309
In Stock
298,000
Factory
1 : ¥3.94000
Cut Tape (CT)
2,000 : ¥1.33384
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.7A (Ta), 20A (Tc)
6V, 10V
62mOhm @ 4.5A, 10V
2.8V @ 250µA
4.5 nC @ 10 V
±20V
228 pF @ 50 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
10,781
In Stock
1 : ¥21.92000
Cut Tape (CT)
5,000 : ¥6.61892
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
64A (Tc)
8V, 10V
9mOhm @ 32A, 10V
4.3V @ 1mA
44 nC @ 10 V
±20V
5400 pF @ 75 V
-
960mW (Ta), 210W (Tc)
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.