Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
-TrenchFET®TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
270mA (Ta), 330mA (Tc)8.7A (Ta)12.6A (Tc)29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 15A, 10V14mOhm @ 10.5A, 10V19mOhm @ 9A, 10V2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.2V @ 250µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 10 V42 nC @ 10 V55 nC @ 5 V195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
23.6 pF @ 10 V1500 pF @ 15 V6000 pF @ 15 V
Power Dissipation (Max)
310mW (Ta), 1.67W (Tc)1.5W (Ta)3.5W (Ta), 7.8W (Tc)4.8W (Tc)
Supplier Device Package
8-SOICTO-236AB
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
Vishay Siliconix
33,809
In Stock
1 : ¥3.86000
Cut Tape (CT)
2,500 : ¥1.03811
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
12.6A (Tc)
4.5V, 10V
19mOhm @ 9A, 10V
2.2V @ 250µA
42 nC @ 10 V
±20V
1500 pF @ 15 V
-
4.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4459ADY-T1-GE3
MOSFET P-CH 30V 29A 8SO
Vishay Siliconix
83,770
In Stock
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.69257
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
29A (Tc)
4.5V, 10V
5mOhm @ 15A, 10V
2.5V @ 250µA
195 nC @ 10 V
±20V
6000 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-236AB
2N7002NXBKR
MOSFET N-CH 60V 270MA TO236AB
Nexperia USA Inc.
34,535
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26391
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
270mA (Ta), 330mA (Tc)
5V, 10V
2.8Ohm @ 200mA, 10V
2.1V @ 250µA
1 nC @ 10 V
±20V
23.6 pF @ 10 V
-
310mW (Ta), 1.67W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4401BDY-T1-E3
MOSFET P-CH 40V 8.7A 8SO
Vishay Siliconix
11,106
In Stock
1 : ¥22.17000
Cut Tape (CT)
2,500 : ¥6.62044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
40 V
8.7A (Ta)
4.5V, 10V
14mOhm @ 10.5A, 10V
3V @ 250µA
55 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.