Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
10.4A (Ta)18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 30A, 10V19mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V19.6 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 15 V1204 pF @ 15 V
Power Dissipation (Max)
2W (Ta)2.1W (Ta), 37W (Tc)
Supplier Device Package
PG-TDSON-8 FLU-DFN2020-6 (Type E)
Package / Case
6-PowerUDFN8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMP3026SFDE-7
DMP3026SFDE-7
MOSFET P-CH 30V 10.4A 6UDFN
Diodes Incorporated
6,047
In Stock
72,000
Factory
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.28522
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10.4A (Ta)
4V, 10V
19mOhm @ 4.5A, 10V
3V @ 250µA
19.6 nC @ 10 V
±25V
1204 pF @ 15 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
PG-TDSON-8 FL
BSZ0910LSATMA1
MOSFET N-CH 30V 18A/40A TSDSON
Infineon Technologies
14,306
In Stock
1 : ¥3.37000
Cut Tape (CT)
5,000 : ¥1.57013
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta), 40A (Tc)
4.5V, 10V
4.5mOhm @ 30A, 10V
2V @ 250µA
17 nC @ 10 V
±20V
1100 pF @ 15 V
-
2.1W (Ta), 37W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.