Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
21mOhm @ 5A, 4.5V41mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 4.5 V160 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
3950 pF @ 20 V4600 pF @ 50 V
Power Dissipation (Max)
5W (Tc)5.2W (Ta), 83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
6-TSOPPowerPAK® SO-8
Package / Case
PowerPAK® SO-8SOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7489DP-T1-GE3
MOSFET P-CH 100V 28A PPAK SO-8
Vishay Siliconix
11,442
In Stock
1 : ¥20.94000
Cut Tape (CT)
3,000 : ¥9.42912
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
4.5V, 10V
41mOhm @ 7.8A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4600 pF @ 50 V
-
5.2W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Pkg 5540
SQ3495EV-T1_GE3
MOSFET P-CH 30V 8A 6TSOP
Vishay Siliconix
15,339
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.80616
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8A (Tc)
2.5V, 10V
21mOhm @ 5A, 4.5V
1.4V @ 250µA
41 nC @ 4.5 V
±12V
3950 pF @ 20 V
-
5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.