Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V60 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)2.6A (Ta)3.4A (Ta)4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
40mOhm @ 2.6A, 4.5V43mOhm @ 4.5A, 4.5V72mOhm @ 3.6A, 4.5V4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA1.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 15 V3.8 nC @ 4.5 V12 nC @ 4.5 V17 nC @ 4.5 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
23 pF @ 25 V292 pF @ 10 V1000 pF @ 10 V1138 pF @ 6 V
Power Dissipation (Max)
250mW (Ta)500mW (Ta)760mW (Ta)1.6W (Ta)
Supplier Device Package
SC-75ASOT-23-3SuperSOT™-6
Package / Case
SC-75, SOT-416SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN306P
MOSFET P-CH 12V 2.6A SUPERSOT3
onsemi
52,706
In Stock
30,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.20104
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
2.6A (Ta)
1.8V, 4.5V
40mOhm @ 2.6A, 4.5V
1.5V @ 250µA
17 nC @ 4.5 V
±8V
1138 pF @ 6 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SG6858TZ
FDC638APZ
MOSFET P-CH 20V 4.5A SUPERSOT6
onsemi
46,078
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.65603
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
2.5V, 4.5V
43mOhm @ 4.5A, 4.5V
1.5V @ 250µA
12 nC @ 4.5 V
±12V
1000 pF @ 10 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
SOT-23-3
DMN2046U-7
MOSFET N-CH 20V 3.4A SOT23
Diodes Incorporated
252,621
In Stock
798,000
Factory
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.39139
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.4A (Ta)
2.5V, 4.5V
72mOhm @ 3.6A, 4.5V
1.4V @ 250µA
3.8 nC @ 4.5 V
±12V
292 pF @ 10 V
-
760mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Pkg 5868
SI1021R-T1-GE3
MOSFET P-CH 60V 190MA SC75A
Vishay Siliconix
22,295
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.46767
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta)
4.5V, 10V
4Ohm @ 500mA, 10V
3V @ 250µA
1.7 nC @ 15 V
±20V
23 pF @ 25 V
-
250mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75, SOT-416
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.