Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STD6N65M2 MOSFET N-CH 650V 4A DPAK STMicroelectronics	1,838 In Stock	1 : ¥10.26000 Cut Tape (CT) 2,500 : ¥4.24440 Tape & Reel (TR)	MDmesh™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	4A (Tc)	10V	1.35Ohm @ 2A, 10V	4V @ 250µA	9.8 nC @ 10 V	±25V	226 pF @ 100 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3105KLGC11 SICFET N-CH 1200V 24A TO247N Rohm Semiconductor	151 In Stock	1 : ¥118.71000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	137mOhm @ 7.6A, 18V	5.6V @ 3.81mA	51 nC @ 18 V	+22V, -4V	574 pF @ 800 V	-	134W	175°C (TJ)	Through Hole	TO-247N	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.