Single FETs, MOSFETs

Results: 2
Series
TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
25.5A (Ta), 60A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
3.85mOhm @ 10A, 10V10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1630 pF @ 50 V1920 pF @ 30 V
Power Dissipation (Max)
5W (Ta), 62.5W (Tc)5W (Ta), 65.7W (Tc)
Stocking Options
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR188DP-T1-RE3
MOSFET N-CH 60V 25.5A/60A PPAK
Vishay Siliconix
745
In Stock
1 : ¥11.82000
Cut Tape (CT)
3,000 : ¥4.88957
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
25.5A (Ta), 60A (Tc)
7.5V, 10V
3.85mOhm @ 10A, 10V
3.6V @ 250µA
44 nC @ 10 V
±20V
1920 pF @ 30 V
-
5W (Ta), 65.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK SO-8
SIR876ADP-T1-GE3
MOSFET N-CH 100V 40A PPAK SO-8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥13.22000
Cut Tape (CT)
3,000 : ¥5.95526
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
10.8mOhm @ 20A, 10V
2.8V @ 250µA
49 nC @ 10 V
±20V
1630 pF @ 50 V
-
5W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.