Single FETs, MOSFETs

Results: 5
Manufacturer
onsemiSTMicroelectronicsTexas InstrumentsVishay Siliconix
Series
-MDmesh™ M5NexFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V80 V300 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)5.6A (Tc)53A (Tc)100A (Ta)390A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2mOhm @ 10A, 10V4.1mOhm @ 19A, 10V40mOhm @ 26.5A, 10V42mOhm @ 4.3A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.3V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V62 nC @ 10 V95 nC @ 10 V731 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V340 pF @ 20 V4240 pF @ 100 V4870 pF @ 40 V62190 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)1.25W (Ta), 2.1W (Tc)3.1W (Ta), 195W (Tc)250W (Tc)600W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-VSON-CLIP (5x6)PowerPAK® 8 x 8SOT-23-3 (TO-236)TO-263 (D2PAK)
Package / Case
8-PowerTDFNPowerPAK® 8 x 8TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2318CDS-T1-GE3
MOSFET N-CH 40V 5.6A SOT23-3
Vishay Siliconix
30,768
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.97324
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
5.6A (Tc)
4.5V, 10V
42mOhm @ 4.3A, 10V
2.5V @ 250µA
9 nC @ 10 V
±20V
340 pF @ 20 V
-
1.25W (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD19502Q5B
MOSFET N-CH 80V 100A 8VSON
Texas Instruments
4,939
In Stock
1 : ¥20.93000
Cut Tape (CT)
2,500 : ¥9.45085
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Ta)
6V, 10V
4.1mOhm @ 19A, 10V
3.3V @ 250µA
62 nC @ 10 V
±20V
4870 pF @ 40 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
PowerPAK_8X8L_Top
SQJQ141EL-T1_GE3
AUTOMOTIVE P-CHANNEL 40 V (D-S)
Vishay Siliconix
167
In Stock
1 : ¥27.01000
Cut Tape (CT)
2,000 : ¥13.13703
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
390A (Tc)
4.5V, 10V
2mOhm @ 10A, 10V
2.5V @ 250µA
731 nC @ 10 V
±20V
62190 pF @ 25 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
SOT 23-3
2N7002LT3G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
23,412
In Stock
1 : ¥2.22000
Cut Tape (CT)
10,000 : ¥0.28473
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
D2Pak
STB45N30M5
NCHANNEL 300 V 0.037 OHM TYP. 53
STMicroelectronics
1,609
In Stock
1 : ¥53.44000
Cut Tape (CT)
1,000 : ¥30.32363
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
53A (Tc)
10V
40mOhm @ 26.5A, 10V
5V @ 250µA
95 nC @ 10 V
±25V
4240 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.