Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.onsemi
Series
-PowerTrench®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
154mA (Tj)180mA (Ta)190mA (Ta), 300mA (Tc)5.4A (Ta)10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V5V, 10V10V
Rds On (Max) @ Id, Vgs
13mOhm @ 10A, 4.5V85mOhm @ 2.9A, 10V4.5Ohm @ 100mA, 10V7Ohm @ 154mA, 4.5V7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 100µA1.5V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 5 V0.43 nC @ 4.5 V24.2 nC @ 10 V74 nC @ 4.5 V
Vgs (Max)
±8V±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 5 V20 pF @ 10 V36 pF @ 25 V1021 pF @ 30 V4951 pF @ 10 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)300mW (Tj)350mW (Ta), 1.14W (Tc)2.11W (Ta)2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOICSC-75, SOT-416TO-236ABTO-252-3
Package / Case
8-SOIC (0.154", 3.90mm Width)SC-75, SOT-416TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
76,368
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SC−75-3_463
NTA7002NT1G
MOSFET N-CH 30V 154MA SC75
onsemi
192,666
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46914
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
154mA (Tj)
2.5V, 4.5V
7Ohm @ 154mA, 4.5V
1.5V @ 100µA
-
±10V
20 pF @ 5 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
TO-236AB
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
663,648
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.30406
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-252-2
ZXMP6A16KTC
MOSFET P-CH 60V 5.4A TO252-3
Diodes Incorporated
22,375
In Stock
117,500
Factory
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.94105
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
5.4A (Ta)
10V
85mOhm @ 2.9A, 10V
1V @ 250µA
24.2 nC @ 10 V
±20V
1021 pF @ 30 V
-
2.11W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-SOIC
FDS6575
MOSFET P-CH 20V 10A 8SOIC
onsemi
16,010
In Stock
1 : ¥11.25000
Cut Tape (CT)
2,500 : ¥4.65302
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
20 V
10A (Ta)
2.5V, 4.5V
13mOhm @ 10A, 4.5V
1.5V @ 250µA
74 nC @ 4.5 V
±8V
4951 pF @ 10 V
-
2.5W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.