Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
CoolMOS™CoolMOS™ C7E
Current - Continuous Drain (Id) @ 25°C
80A (Tc)109A (Tc)
Rds On (Max) @ Id, Vgs
17mOhm @ 58.2A, 10V30mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 2.91mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V443 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 100 V9890 pF @ 400 V
Power Dissipation (Max)
446W (Tc)520W (Tc)
Supplier Device Package
PG-TO247-3-41PG-TO247-4TO-247AC
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
604
In Stock
1 : ¥160.26000
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N-Channel
MOSFET (Metal Oxide)
600 V
109A (Tc)
10V
17mOhm @ 58.2A, 10V
4V @ 2.91mA
240 nC @ 10 V
±20V
9890 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
MOSFETTO247
IPZ60R017C7XKSA1
MOSFET N-CH 600V 109A TO247-4
Infineon Technologies
166
In Stock
1 : ¥166.58000
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Active
N-Channel
MOSFET (Metal Oxide)
600 V
109A (Tc)
10V
17mOhm @ 58.2A, 10V
4V @ 2.91mA
240 nC @ 10 V
±20V
9890 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
TO-247-3 AC EP
SIHG80N60E-GE3
MOSFET N-CH 600V 80A TO247AC
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥94.49000
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Active
N-Channel
MOSFET (Metal Oxide)
600 V
80A (Tc)
10V
30mOhm @ 40A, 10V
4V @ 250µA
443 nC @ 10 V
±30V
6900 pF @ 100 V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.