Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STB12NK80ZT4 MOSFET N-CH 800V 10.5A D2PAK STMicroelectronics	3,247 In Stock	1 : ¥40.47000 Cut Tape (CT) 1,000 : ¥20.93517 Tape & Reel (TR)	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	10.5A (Tc)	10V	750mOhm @ 5.25A, 10V	4.5V @ 100µA	87 nC @ 10 V	±30V	2620 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDD390N15ALZ MOSFET N-CH 150V 26A DPAK onsemi	3,762 In Stock 15,000 Factory	1 : ¥11.99000 Cut Tape (CT) 2,500 : ¥4.96992 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Tc)	4.5V, 10V	42mOhm @ 26A, 10V	2.8V @ 250µA	39 nC @ 10 V	±20V	1760 pF @ 75 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFS9N60ATRLPBF MOSFET N-CH 600V 9.2A D2PAK Vishay Siliconix	950 In Stock	1 : ¥28.57000 Cut Tape (CT) 800 : ¥17.23393 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.2A (Tc)	10V	750mOhm @ 5.5A, 10V	4V @ 250µA	49 nC @ 10 V	±30V	1400 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.