Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesonsemiSTMicroelectronicsVishay Siliconix
Series
-HEXFET®STripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)16A (Tc)17A (Tc)29A (Ta), 140A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 50A, 10V16mOhm @ 30A, 10V52mOhm @ 7A, 10V70mOhm @ 10A, 10V100mOhm @ 10A, 10V100mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V20 nC @ 10 V25 nC @ 10 V32 nC @ 10 V66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 25 V370 pF @ 25 V640 pF @ 25 V1258 pF @ 25 V1810 pF @ 25 V2100 pF @ 25 V
Power Dissipation (Max)
3.2W (Ta), 21W (Tc)3.7W (Ta), 83W (Tc)45W (Tc)60W (Tc)110W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)8-WDFN (3.3x3.3)D2PAKTO-220TO-220AB
Package / Case
8-PowerTDFN, 5 Leads8-PowerWDFNTO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-WDFN
NVTFS5116PLTWG
MOSFET P-CH 60V 6A 8WDFN
onsemi
13,282
In Stock
1 : ¥9.03000
Cut Tape (CT)
5,000 : ¥3.57123
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4.5V, 10V
52mOhm @ 7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1258 pF @ 25 V
-
3.2W (Ta), 21W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
TO-220AB PKG
IRFZ24NPBF
MOSFET N-CH 55V 17A TO220AB
Infineon Technologies
8,404
In Stock
1 : ¥5.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
10V
70mOhm @ 10A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
370 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220-3
STP16NF06
MOSFET N-CH 60V 16A TO220AB
STMicroelectronics
649
In Stock
1 : ¥9.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
16A (Tc)
10V
100mOhm @ 8A, 10V
4V @ 250µA
13 nC @ 10 V
±20V
315 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
TO-220AB
IRFZ24PBF
MOSFET N-CH 60V 17A TO220AB
Vishay Siliconix
240
In Stock
1 : ¥12.97000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Tc)
10V
100mOhm @ 10A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
640 pF @ 25 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
D²PAK
STB60NF06T4
MOSFET N-CH 60V 60A D2PAK
STMicroelectronics
2,343
In Stock
1 : ¥14.86000
Cut Tape (CT)
1,000 : ¥7.05222
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
10V
16mOhm @ 30A, 10V
4V @ 250µA
66 nC @ 10 V
±20V
1810 pF @ 25 V
-
110W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-PowerTDFN, 5 Leads
NVMFS5C442NWFAFT1G
MOSFET N-CH 40V 29A/140A 5DFN
onsemi
0
In Stock
Check Lead Time
1 : ¥16.01000
Cut Tape (CT)
1,500 : ¥7.59669
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
29A (Ta), 140A (Tc)
10V
2.3mOhm @ 50A, 10V
4V @ 250µA
32 nC @ 10 V
±20V
2100 pF @ 25 V
-
3.7W (Ta), 83W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.