Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDMC86102LZ MOSFET N-CH 100V 7A/18A 8MLP onsemi	5,767 In Stock	1 : ¥14.29000 Cut Tape (CT) 3,000 : ¥6.45042 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7A (Ta), 18A (Tc)	4.5V, 10V	24mOhm @ 6.5A, 10V	2.2V @ 250µA	22 nC @ 10 V	±20V	1290 pF @ 50 V	-	2.3W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
SSM3K36MFV,L3F MOSFET N-CH 20V 500MA VESM Toshiba Semiconductor and Storage	439,962 In Stock	1 : ¥2.71000 Cut Tape (CT) 8,000 : ¥0.49432 Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	500mA (Ta)	1.5V, 5V	630mOhm @ 200mA, 5V	1V @ 1mA	1.23 nC @ 4 V	±10V	46 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	VESM	SOT-723
SSM3J130TU,LF MOSFET P-CH 20V 4.4A UFM Toshiba Semiconductor and Storage	123,313 In Stock	1 : ¥5.75000 Cut Tape (CT) 3,000 : ¥1.33130 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.4A (Ta)	1.5V, 4.5V	25.8mOhm @ 4A, 4.5V	1V @ 1mA	24.8 nC @ 4.5 V	±8V	1800 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	Surface Mount	UFM	3-SMD, Flat Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.